Discrete Semiconductor Products

SI6415DQ-T1-E3

LTB

MOSFET P-CH 30V 6.5A 8TSSOP

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Discrete Semiconductor Products

LTB

MOSFET P-CH 30V 6.5A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6415DQ-T1-E3

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	19 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [custom]	Package / Case [custom]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type
Vishay General Semiconductor - Diodes Division SI6415DQ-T1-E3	1.5 W	MOSFET (Metal Oxide)	6.5 A	8-TSSOP	0.173 "	4.4 mm	4.5 V 10 V	Surface Mount	20 V	1 V	-55 °C	150 °C	19 mOhm	30 V	8-TSSOP	70 nC	P-Channel
Vishay General Semiconductor - Diodes Division SI6415DQ-T1-GE3	1.5 W	MOSFET (Metal Oxide)	6.4 A	8-TSSOP	0.173 "	4.4 mm	4.5 V 10 V	Surface Mount	20 V	1 V	-55 °C	150 °C	19 mOhm	30 V	8-TSSOP	70 nC	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 30 V 6.5A (Ta) 1.5W (Ta) Surface Mount 8-TSSOP

Technical documentation and resources