SI6415 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 30V 6.5A 8TSSOP
| Part | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | Package / Case [custom] | Package / Case [custom] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.5 W | MOSFET (Metal Oxide) | 6.5 A | 8-TSSOP | 0.173 " | 4.4 mm | 4.5 V 10 V | Surface Mount | 20 V | 1 V | -55 °C | 150 °C | 19 mOhm | 30 V | 8-TSSOP | 70 nC | P-Channel |
Vishay General Semiconductor - Diodes Division | 1.5 W | MOSFET (Metal Oxide) | 6.4 A | 8-TSSOP | 0.173 " | 4.4 mm | 4.5 V 10 V | Surface Mount | 20 V | 1 V | -55 °C | 150 °C | 19 mOhm | 30 V | 8-TSSOP | 70 nC | P-Channel |