STF6N65M2
ObsoletePOWER MOSFET, N CHANNEL, 4 A, 650 V, 1.2 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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STF6N65M2
ObsoletePOWER MOSFET, N CHANNEL, 4 A, 650 V, 1.2 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | STF6N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 226 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) @ Id, Vgs | 1.35 Ohm |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STF6N65M2 Series
These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.Extremely low gate chargeExcellent output capacitance (COSS) profile100% avalanche testedZener-protected
Documents
Technical documentation and resources