
DS28E80Q+T
ActiveGAMMA RADIATION RESISTANT 1-WIRE MEMORY
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DS28E80Q+T
ActiveGAMMA RADIATION RESISTANT 1-WIRE MEMORY
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DS28E80Q+T |
|---|---|
| Access Time | 2 µs |
| Memory Format | EEPROM |
| Memory Interface | 1-Wire® |
| Memory Organization | 2 K |
| Memory Size | 256 B |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 C |
| Operating Temperature [Min] | -40 ¯C |
| Supplier Device Package | 6-TDFN (3x3) |
| Technology | EEPROM |
| Voltage - Supply [Max] | 3.63 V |
| Voltage - Supply [Min] | 2.97 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DS28E80 Series
DS28E80Q+T is a gamma radiation-resistant 1-wire memory. It is a user-programmable non-volatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248bytes of user memory that are organized in blocks of 8bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire® bus at standard speed or overdrive speed. The device has its own guaranteed unique 64-bit registration number that is factory-programmed into the chip. The communication follows the 1-wire protocol with a 64-bit registration number acting as a node address in the case of a multiple-device 1-wire network. Typical applications include identification of medical consumables, identification and calibration medical tools/accessories.
Documents
Technical documentation and resources