Zenode.ai Logo
DS28E80Q+U
Integrated Circuits (ICs)

DS28E80Q+U

Unknown
Analog Devices Inc./Maxim Integrated

GAMMA RADIATION RESISTANT 1-WIRE MEMORY

Deep-Dive with AI

Search across all available documentation for this part.

DS28E80Q+U
Integrated Circuits (ICs)

DS28E80Q+U

Unknown
Analog Devices Inc./Maxim Integrated

GAMMA RADIATION RESISTANT 1-WIRE MEMORY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDS28E80Q+U
Access Time2 µs
Memory FormatEEPROM
Memory Interface1-Wire®
Memory Organization2 K
Memory Size256 B
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 C
Operating Temperature [Min]-40 ¯C
Supplier Device Package6-TDFN (3x3)
TechnologyEEPROM
Voltage - Supply [Max]3.63 V
Voltage - Supply [Min]2.97 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+
700$ 0.00

Description

General part information

DS28E80 Series

The DS28E80 is a user-programmable nonvolatile memory chip. In contrast to the floating-gate storage cells, the DS28E80 employs a storage cell technology that is resistant to gamma radiation. The DS28E80 has 248 bytes of user memory that are organized in blocks of 8 bytes. Individual blocks can be write-protected. Each memory block can be written 8 times. The DS28E80 communicates over the single-contact 1-Wire®bus at standard speed or overdrive speed. Each device has its own guaranteed unique 64-bit registration number that is factory programmed into the chip. The communication follows the 1-Wire protocol with a 64-bit registration number acting as node address in the case of a multiple-device 1-Wire network.ApplicationsIdentification and Calibration Medical Tools/AccessoriesIdentification of Medical Consumables