Specification	MTD3055VL

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	48 W, 3.9 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

MTD3055VL Series

Power MOSFET 12 Amps, 60 Volts N-Channel DPAK

Part	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor MTD3055VL	Surface Mount	20 V	10 nC	570 pF	2 V	60 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-252AA	3.9 W 48 W	12 A	180 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	5 V
ON Semiconductor MTD3055V	Surface Mount	20 V		500 pF	4 V	60 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-252AA	3.9 W 48 W	12 A	150 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	10 V	17 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MTD3055VL Series

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.