MTD3055VL Series

Power MOSFET 12 Amps, 60 Volts N-Channel DPAK

Catalog

Power MOSFET 12 Amps, 60 Volts N-Channel DPAK

Part	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor MTD3055VL	Surface Mount	20 V	10 nC	570 pF	2 V	60 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-252AA	3.9 W 48 W	12 A	180 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	5 V
ON Semiconductor MTD3055V	Surface Mount	20 V		500 pF	4 V	60 V	-55 °C	175 ░C	MOSFET (Metal Oxide)	TO-252AA	3.9 W 48 W	12 A	150 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	N-Channel	10 V	17 nC

Catalog

Power MOSFET 12 Amps, 60 Volts N-Channel DPAK

Key Features

• Avalanche Energy Specified

• IDSSand VDS(on)Specified at Elevated Temperature

Description

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.