Discrete Semiconductor Products

SIS412DN-T1-GE3

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MOSFET N-CH 30V 12A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 30V 12A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS412DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	435 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	15.6 W, 3.2 W
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIS412DN-T1-GE3	30 V	2.5 V	435 pF	12 nC	-55 °C	150 °C	PowerPAK® 1212-8	N-Channel	MOSFET (Metal Oxide)	PowerPAK® 1212-8	12 A	Surface Mount	20 V	3.2 W 15.6 W	4.5 V 10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 12A (Tc) 3.2W (Ta), 15.6W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources