SIS412 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 12A PPAK1212-8
| Part | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Vgs (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 2.5 V | 435 pF | 12 nC | -55 °C | 150 °C | PowerPAK® 1212-8 | N-Channel | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | 12 A | Surface Mount | 20 V | 3.2 W 15.6 W | 4.5 V 10 V |