Discrete Semiconductor Products

JANS2N5795

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Microchip Technology

NPN TRANSISTOR

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Discrete Semiconductor Products

JANS2N5795

Active

Microchip Technology

NPN TRANSISTOR

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JANS2N5795

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-78-6 Metal Can
Power - Max [Max]	600 mW
Qualification	MIL-PRF-19500/496
Supplier Device Package	TO-78-6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

JANTXV2N5795A-Dual-Transistor Series

PNP Silicon Dual -60V, -0.6A

Part	Power - Max [Max]	Transistor Type	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Package / Case	Vce Saturation (Max) @ Ib, Ic	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Microchip Technology JANS2N5795A	600 mW	2 PNP (Dual)	Through Hole	175 ░C	-65 °C	10 µA	TO-78-6	600 mA	60 V	MIL-PRF-19500/496	TO-78-6 Metal Can	1.6 V	Military	40
Microchip Technology JANTXV2N5795	600 mW	2 PNP (Dual)	Through Hole	175 ░C	-65 °C	10 µA	TO-78-6	600 mA	60 V	MIL-PRF-19500/496	TO-78-6 Metal Can	1.6 V	Military	40
Microchip Technology JANS2N5795	600 mW	2 PNP (Dual)	Through Hole	175 ░C	-65 °C	10 µA	TO-78-6	600 mA	60 V	MIL-PRF-19500/496	TO-78-6 Metal Can	1.6 V	Military	40
Microchip Technology JANTX2N5795A	600 mW	2 PNP (Dual)	Through Hole	175 ░C	-65 °C	10 µA	TO-78-6	600 mA	60 V	MIL-PRF-19500/496	TO-78-6 Metal Can	1.6 V	Military	40
Microchip Technology 2N5795AU/TR	600 mW	2 PNP (Dual)	Surface Mount	175 ░C	-65 °C	10 µA	U	600 mA	60 V		6-SMD No Lead	1.6 V		40
Microchip Technology JANTXV2N5795A	600 mW	2 PNP (Dual)	Through Hole	175 ░C	-65 °C	10 µA	TO-78-6	600 mA	60 V	MIL-PRF-19500/496	TO-78-6 Metal Can	1.6 V	Military	40
Microchip Technology JANTX2N5795	600 mW	2 PNP (Dual)	Through Hole	175 ░C	-65 °C	10 µA	TO-78-6	600 mA	60 V	MIL-PRF-19500/496	TO-78-6 Metal Can	1.6 V	Military	40

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	50	$ 403.68

Description

General part information

JANTXV2N5795A-Dual-Transistor Series

This specification covers the performance requirements for two electrically isolated, PNP silicon, 2N5795 and 2N5796 unitized, dual 2N2907A transistors as one dual unit for high speed saturated switching applications. Both matched and unmatched types are covered. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/496. Provisions for radiation hardness assurance (RHA) are provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources

No documents available