Discrete Semiconductor Products

NTMS10P02R2G

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POWER MOSFET, P CHANNEL, 20 V, 10 MA, 0.014 OHM, SOIC, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 20 V, 10 MA, 0.014 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTMS10P02R2G

Current - Continuous Drain (Id) @ 25°C	8.8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3640 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Single P−Channel Enhancement−Mode Power MOSFET -20V, -10A, 14mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)
ON Semiconductor NTMS10P02R2G	8.8 A	MOSFET (Metal Oxide)	1.2 V	2.5 V 4.5 V	Surface Mount	14 mOhm	P-Channel	-55 °C	150 °C	20 V	70 nC	8-SOIC	3.9 mm	0.154 in	3640 pF	8-SOIC	12 V

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General part information

Power MOSFET −10 Amps, −20 VoltsP−Channel Enhancement−ModeSingle SOIC−8 Package

Technical documentation and resources