NTMS10P02 Series

Single P−Channel Enhancement−Mode Power MOSFET -20V, -10A, 14mΩ

Catalog

Single P−Channel Enhancement−Mode Power MOSFET -20V, -10A, 14mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Vgs (Max)
ON Semiconductor NTMS10P02R2G	8.8 A	MOSFET (Metal Oxide)	1.2 V	2.5 V 4.5 V	Surface Mount	14 mOhm	P-Channel	-55 °C	150 °C	20 V	70 nC	8-SOIC	3.9 mm	0.154 in	3640 pF	8-SOIC	12 V

Single P−Channel Enhancement−Mode Power MOSFET -20V, -10A, 14mΩ

• Ultra Low RDS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature SO-8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• SOIC-8 Mounting Information Provided

Power MOSFET −10 Amps, −20 VoltsP−Channel Enhancement−ModeSingle SOIC−8 Package