Specification	FDMC3612-L701

Current - Continuous Drain (Id) @ 25°C	16 A, 3.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	880 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	35 W, 2.3 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

FDMC3612-L701 Series

N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FDMC3612-L701	3.3 A 16 A	4 V	20 V	8-WDFN (3.3x3.3)	100 V	880 pF	2.3 W 35 W	110 mOhm	21 nC	8-PowerWDFN	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	N-Channel	6 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.46
		10	$ 0.92
		100	$ 0.61
		500	$ 0.48
		1000	$ 0.44
	Digi-Reel®	1	$ 1.46
		10	$ 0.92
		100	$ 0.61
		500	$ 0.48
		1000	$ 0.44
	Tape & Reel (TR)	3000	$ 0.38
		6000	$ 0.36
		9000	$ 0.35
Newark	Each	2500	$ 0.38
		10000	$ 0.36
ON Semiconductor	N/A	1	$ 0.37

Description

General part information

FDMC3612-L701 Series

This N-Channel MOSFET is produced using an advanced Power Trench®process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.