Discrete Semiconductor Products

STE40NK90ZD

Obsolete

MOSFET N-CH 900V 40A ISOTOP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 900V 40A ISOTOP

Technical Specifications

Parameters and characteristics for this part

Specification	STE40NK90ZD

Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	826 nC
Input Capacitance (Ciss) (Max) @ Vds	25000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	ISOTOP
Power Dissipation (Max)	600 W
Supplier Device Package	ISOTOP®
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Mounting Type
STMicroelectronics STE40NK90ZD	ISOTOP	25000 pF	ISOTOP®	MOSFET (Metal Oxide)	4.5 V	900 V	150 °C	-65 °C	10 V	N-Channel	826 nC	600 W	30 V	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 39.38

General part information

N-Channel 900 V 40A (Tc) 600W (Tc) Chassis Mount ISOTOP®

Technical documentation and resources