Discrete Semiconductor Products
GT40RR21(STA1,E
ActiveToshiba Semiconductor and Storage
IGBTS, 1350 V/40 A IGBT, BUILT-IN DIODES, TO-3P(N)
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Search across all available documentation for this part.
Discrete Semiconductor Products
GT40RR21(STA1,E
ActiveToshiba Semiconductor and Storage
IGBTS, 1350 V/40 A IGBT, BUILT-IN DIODES, TO-3P(N)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | GT40RR21(STA1,E |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 40 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 230 W |
| Reverse Recovery Time (trr) | 600 ns |
| Supplier Device Package | TO-3P(N) |
| Switching Energy | - |
| Switching Energy | 540 µJ |
| Test Condition | 280 V, 10 Ohm, 20 V, 40 A |
| Vce(on) (Max) @ Vge, Ic | 2.8 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 49 | $ 5.34 | |
| Tube | 1 | $ 4.57 | ||
| 10 | $ 3.02 | |||
| 100 | $ 2.15 | |||
| 500 | $ 1.77 | |||
| 1000 | $ 1.67 | |||
Description
General part information
GT40RR21 Series
IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
Documents
Technical documentation and resources