GT40RR21 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
IGBTS, 1350 V/40 A IGBT, BUILT-IN DIODES, TO-3P(N)
| Part | Test Condition | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Mounting Type | Vce(on) (Max) @ Vge, Ic | Reverse Recovery Time (trr) | Package / Case | Power - Max [Max] | Operating Temperature | Current - Collector Pulsed (Icm) | Switching Energy | Switching Energy |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 10 Ohm 20 V 40 A 280 V | 40 A | TO-3P(N) | 1200 V | Through Hole | 2.8 V | 600 ns | SC-65-3 TO-3P-3 | 230 W | 175 °C | 200 A | - | 540 µJ |