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TO-3 Pkg
Discrete Semiconductor Products

MJ11015G

Active
ON Semiconductor

DARLINGTON TRANSISTOR, PNP, 120 V, 200 W, 30 A, TO-3, 2 PINS

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TO-3 Pkg
Discrete Semiconductor Products

MJ11015G

Active
ON Semiconductor

DARLINGTON TRANSISTOR, PNP, 120 V, 200 W, 30 A, TO-3, 2 PINS

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Technical Specifications

Parameters and characteristics for this part

SpecificationMJ11015G
Current - Collector (Ic) (Max) [Max]30 A
Current - Collector Cutoff (Max) [Max]1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]1000 hFE
Frequency - Transition4 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseTO-3, TO-204AA
Power - Max [Max]200 W
Supplier Device PackageTO-204
Supplier Device PackageTO-3
Transistor TypePNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]4 V
Voltage - Collector Emitter Breakdown (Max) [Max]120 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 8.32
10$ 7.13
25$ 6.65
100$ 5.95
300$ 5.60
500$ 5.25
1000$ 4.72
NewarkEach 1$ 8.26
10$ 5.44
25$ 5.44
50$ 5.43
100$ 4.74
300$ 4.49
ON SemiconductorN/A 1$ 4.62

Description

General part information

MJ11015 Series

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.