MJ11015 Series

30 A, 120 V PNP Darlington Bipolar Power Transistor

Catalog

30 A, 120 V PNP Darlington Bipolar Power Transistor

Part	Transistor Type	Supplier Device Package	Supplier Device Package	Mounting Type	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	Power - Max [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor MJ11015G	PNP - Darlington	TO-204	TO-3	Through Hole	TO-204AA TO-3	1 mA	4 V	200 W	4 MHz	1000 hFE	120 V	30 A	-55 °C	200 C

Catalog

30 A, 120 V PNP Darlington Bipolar Power Transistor

Key Features

• High DC Current Gain - hFE= 1000 (Min) @ IC- 20 Adc

• Monolithic Construction with Built-in Base Emitter Shunt Resistor

• Junction Temperature to +200°C

Description

The NPN Darlington Bipolar Power Transistor is designed for use as output devices in complementary general purpose amplifier applications. The MJ11015 (PNP); MJ11012 and MJ11016 (NPN) are complementary devices.