Specification	NVTYS004N03CLTWG

Current - Continuous Drain (Id) @ 25°C	85 A, 21 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1520 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power Dissipation (Max)	51.5 W, 3 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	8-LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

NVTYS004N03CL Series

MOSFET – Power, Single, N-Channel

Part	Rds On (Max) @ Id, Vgs	Grade	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id [Max]	Qualification	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor NVTYS004N03CLTWG	4.2 mOhm	Automotive	21 A 85 A	3 W 51.5 W	1520 pF	8-LFPAK56 SOT-1205	8-LFPAK	21 nC	30 V	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	20 V	Surface Mount	2.2 V	AEC-Q101	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET – Power, Single, N-Channel, 30 V, 85 A

Technical documentation and resources