MOSFET – Power, Single, N-Channel
MOSFET – Power, Single, N-Channel
| Part | Rds On (Max) @ Id, Vgs | Grade | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | FET Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id [Max] | Qualification | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 4.2 mOhm | Automotive | 21 A 85 A | 3 W 51.5 W | 1520 pF | 8-LFPAK56 SOT-1205 | 8-LFPAK | 21 nC | 30 V | N-Channel | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 20 V | Surface Mount | 2.2 V | AEC-Q101 | 4.5 V 10 V |