Discrete Semiconductor Products
2STR2160
ActiveSTMicroelectronics
LOW VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
Discrete Semiconductor Products
2STR2160
ActiveSTMicroelectronics
LOW VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | 2STR2160 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 180 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 480 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 11475 | $ 0.72 | |
Description
General part information
2STR2160 Series
The device in a PNP transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary NPN is the 2STR1160.
Documents
Technical documentation and resources