Discrete Semiconductor Products
STL57N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.061 OHM TYP., 22.5 A MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE
Discrete Semiconductor Products
STL57N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.061 OHM TYP., 22.5 A MDMESH M5 POWER MOSFET IN A POWERFLAT 8X8 HV PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STL57N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.3 A, 22.5 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 4-PowerVDFN |
| Power Dissipation (Max) | 189 W, 2.8 W |
| Rds On (Max) @ Id, Vgs [Max] | 69 mOhm |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL57N65M5 Series
This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources