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Power Semiconductor sic schottky LSIC2SD065A20A Image
Discrete Semiconductor Products

LSIC2SD065A20A

Obsolete
LITTELFUSE

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 45 A, 63 NC, TO-220

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Power Semiconductor sic schottky LSIC2SD065A20A Image
Discrete Semiconductor Products

LSIC2SD065A20A

Obsolete
LITTELFUSE

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 45 A, 63 NC, TO-220

Technical Specifications

Parameters and characteristics for this part

SpecificationLSIC2SD065A20A
Capacitance @ Vr, F960 pF
Current - Average Rectified (Io)45 A
Current - Reverse Leakage @ Vr50 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)0 ns
Speed500 mA
Supplier Device PackageTO-220-2L
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 873$ 12.121m+
1000$ 12.12
Tube 1$ 11.351m+
10$ 9.73
100$ 8.11
500$ 7.15
NewarkEach 1$ 11.021m+
25$ 8.26
100$ 6.47
250$ 6.20
500$ 5.90
1000$ 5.75
TMEN/A 1$ 9.86<1d
5$ 8.25
10$ 7.75
50$ 7.31

Description

General part information

LSIC2SD065A20A Series

This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.