Discrete Semiconductor Products
BUK9K13-60RAX
ActiveNexperia USA Inc.
DUAL N-CHANNEL 60 V, 12.5 MOHM LOGIC LEVEL MOSFET IN LFPAK56D USING REPETITIVE AVALANCHE TECHNOLOGY
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Discrete Semiconductor Products
BUK9K13-60RAX
ActiveNexperia USA Inc.
DUAL N-CHANNEL 60 V, 12.5 MOHM LOGIC LEVEL MOSFET IN LFPAK56D USING REPETITIVE AVALANCHE TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9K13-60RAX |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 40 A |
| Drain to Source Voltage (Vdss) | 60 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2953 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1205, 8-LFPAK56 |
| Power - Max [Max] | 64 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 11.2 mOhm |
| Supplier Device Package | LFPAK56D |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.80 | |
| 10 | $ 1.50 | |||
| 100 | $ 1.19 | |||
| 500 | $ 1.01 | |||
| Digi-Reel® | 1 | $ 1.80 | ||
| 10 | $ 1.50 | |||
| 100 | $ 1.19 | |||
| 500 | $ 1.01 | |||
| N/A | 13106 | $ 3.33 | ||
| Tape & Reel (TR) | 1500 | $ 0.86 | ||
| 3000 | $ 0.81 | |||
| 7500 | $ 0.78 | |||
| 10500 | $ 0.78 | |||
Description
General part information
BUK9K13 Series
Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications.
Documents
Technical documentation and resources