Specification	SIDR402DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	64.6 A, 100 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC
Input Capacitance (Ciss) (Max) @ Vds	9100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 125 W
Rds On (Max) @ Id, Vgs	0.88 mOhm
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.3 V

SIDR402 Series

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIDR402DP-T1-GE3	PowerPAK® SO-8DC	0.88 mOhm	-55 °C	150 °C	165 nC	6.25 W 125 W	MOSFET (Metal Oxide)	2.3 V	4.5 V 10 V	Surface Mount	40 V	-16 V 20 V	N-Channel	PowerPAK® SO-8	64.6 A 100 A	9100 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.45
	Digi-Reel®	1	$ 2.45
	Tape & Reel (TR)	6000	$ 1.06
		9000	$ 1.03
Newark	Each (Supplied on Full Reel)	6000	$ 1.10
		10000	$ 1.06

General part information

N-Channel 40 V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 125W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources