SIDR402 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 40V 64.6A/100A PPAK
| Part | Supplier Device Package | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) | Vgs (Max) | FET Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® SO-8DC | 0.88 mOhm | -55 °C | 150 °C | 165 nC | 6.25 W 125 W | MOSFET (Metal Oxide) | 2.3 V | 4.5 V 10 V | Surface Mount | 40 V | -16 V 20 V | N-Channel | PowerPAK® SO-8 | 64.6 A 100 A | 9100 pF |