Discrete Semiconductor Products

FDS6570A

Obsolete

ON Semiconductor

SINGLE N-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET 20V, 15A, 7.5MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-751EB-SOIC8

Discrete Semiconductor Products

FDS6570A

Obsolete

ON Semiconductor

SINGLE N-CHANNEL 2.5V SPECIFIED POWERTRENCH® MOSFET 20V, 15A, 7.5MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-751EB-SOIC8

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6570A

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs [Max]	7.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDS6570A Series

Single N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 15A, 7.5mΩ

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS6570A	8-SOIC	1.5 V	Surface Mount	4700 pF	20 V	-55 °C	150 °C	15 A	2.5 V 4.5 V	N-Channel	8 V	MOSFET (Metal Oxide)	2.5 W	66 nC	7.5 mOhm	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS6570A Series

This N-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.