Discrete Semiconductor Products

STGPL6NC60DI

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TRANSISTOR: IGBT; 600V; 6A; 56W; TO220FP

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Discrete Semiconductor Products

Active

TRANSISTOR: IGBT; 600V; 6A; 56W; TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STGPL6NC60DI

Current - Collector (Ic) (Max) [Max]	14 A
Gate Charge	12 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	56 W
Reverse Recovery Time (trr)	23 ns
Supplier Device Package	TO-220FP
Switching Energy	24 µJ, 32 µJ
Td (on/off) @ 25°C	46 ns, 6.7 ns
Test Condition	15 V, 390 V, 3 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic [Max]	2.9 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Vce(on) (Max) @ Vge, Ic [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Gate Charge	Td (on/off) @ 25°C	Supplier Device Package	Mounting Type	Switching Energy	Reverse Recovery Time (trr)	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition
STMicroelectronics STGPL6NC60DI	2.9 V	14 A	56 W	12 nC	6.7 ns 46 ns	TO-220FP	Through Hole	24 µJ 32 µJ	23 ns	TO-220-3 Full Pack	150 °C	-55 °C	600 V	3 A 10 Ohm 15 V 390 V
STMicroelectronics STGPL6NC60D	2.9 V	14 A	56 W	12 nC	6.7 ns 46 ns	TO-220	Through Hole	23.5 µJ 46.5 µJ	50 ns	TO-220-3	150 °C	-55 °C	600 V	3 A 10 Ohm 15 V 390 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT 600 V 14 A 56 W Through Hole TO-220FP

Technical documentation and resources