Discrete Semiconductor Products

SIZF640DT-T1-GE3

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MOSFET 2N-CH 40V 41A PWRPAIR

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Discrete Semiconductor Products

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MOSFET 2N-CH 40V 41A PWRPAIR

Technical Specifications

Parameters and characteristics for this part

Specification	SIZF640DT-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	159 A, 41 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs [Max]	106 nC
Input Capacitance (Ciss) (Max) @ Vds	5750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerDFN
Power - Max	4.2 W, 62.5 W
Rds On (Max) @ Id, Vgs	1.37 mOhm
Supplier Device Package	PowerPAIR® 6x5FS
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4 V

Part	Package / Case	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	Configuration
Vishay General Semiconductor - Diodes Division SIZF640DT-T1-GE3	8-PowerDFN	4.2 W 62.5 W	5750 pF	-55 °C	150 °C	41 A 159 A	Surface Mount	40 V	2.4 V	106 nC	PowerPAIR® 6x5FS	MOSFET (Metal Oxide)	1.37 mOhm	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.81
	Digi-Reel®	1	$ 3.81
	Tape & Reel (TR)	6000	$ 1.26

General part information

Mosfet Array 40V 41A (Ta), 159A (Tc) 4.2W (Ta), 62.5W (Tc) Surface Mount PowerPAIR® 6x5FS

Technical documentation and resources