Discrete Semiconductor Products

SISS04DN-T1-GE3

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MOSFET N-CH 30V 50.5A/80A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 50.5A/80A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS04DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	80 A, 50.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	4460 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8S
Power Dissipation (Max)	5 W, 65.7 W
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Mounting Type	FET Type	Supplier Device Package	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SISS04DN-T1-GE3	MOSFET (Metal Oxide)	-55 °C	150 °C	50.5 A 80 A	PowerPAK® 1212-8S	93 nC	2.2 V	Surface Mount	N-Channel	PowerPAK® 1212-8S	-12 V 16 V	1.2 mOhm	30 V	5 W 65.7 W	4.5 V 10 V	4460 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 50.5A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Technical documentation and resources