SISS04 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 50.5A/80A PPAK
| Part | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id [Max] | Mounting Type | FET Type | Supplier Device Package | Vgs (Max) [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | -55 °C | 150 °C | 50.5 A 80 A | PowerPAK® 1212-8S | 93 nC | 2.2 V | Surface Mount | N-Channel | PowerPAK® 1212-8S | -12 V 16 V | 1.2 mOhm | 30 V | 5 W 65.7 W | 4.5 V 10 V | 4460 pF |