STGW75M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 75 A LOW LOSS
STGW75M65DF2
ActiveTRENCH GATE FIELD-STOP IGBT M SERIES, 650 V 75 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW75M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 120 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Gate Charge | 225 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 468 W |
| Reverse Recovery Time (trr) | 165 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 2.54 mJ, 690 µJ |
| Td (on/off) @ 25°C [custom] | 47 ns |
| Td (on/off) @ 25°C [custom] | 125 ns |
| Test Condition | 75 A, 3.3 Ohm, 15 V, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 600 | $ 6.95 | |
| Tube | 1 | $ 7.38 | ||
| 30 | $ 4.26 | |||
| 120 | $ 3.57 | |||
| 510 | $ 3.08 | |||
Description
General part information
STGW75 Series
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
