Discrete Semiconductor Products
R6002END3TL1
NRNDRohm Semiconductor
TRANSISTOR MOSFET N-CH 600V 1.7A 3-PIN TO-252 EMBOSS T/R
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Discrete Semiconductor Products
R6002END3TL1
NRNDRohm Semiconductor
TRANSISTOR MOSFET N-CH 600V 1.7A 3-PIN TO-252 EMBOSS T/R
Technical Specifications
Parameters and characteristics for this part
| Specification | R6002END3TL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 65 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 26 W |
| Rds On (Max) @ Id, Vgs | 3.4 Ohm |
| Supplier Device Package | TO-252 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1903 | $ 1.30 | |
Description
General part information
R6002END3 Series
R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Documents
Technical documentation and resources