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600V 2A TO-252, Low-noise Power MOSFET
Description
AI
R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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600V 2A TO-252, Low-noise Power MOSFET
600V 2A TO-252, Low-noise Power MOSFET
| Part | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 65 pF | MOSFET (Metal Oxide) | N-Channel | 600 V | 1.7 A | 3.4 Ohm | 150 °C | -55 °C | 6.5 nC | TO-252 | 26 W | 20 V | 10 V | Surface Mount |