Discrete Semiconductor Products
NXV100XPR
ActiveNexperia USA Inc.
POWER MOSFET, P CHANNEL, 30 V, 1.5 A, 0.104 OHM, SOT-23, SURFACE MOUNT
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Discrete Semiconductor Products
NXV100XPR
ActiveNexperia USA Inc.
POWER MOSFET, P CHANNEL, 30 V, 1.5 A, 0.104 OHM, SOT-23, SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NXV100XPR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 1.8 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 354 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 340 mW, 2.1 W |
| Rds On (Max) @ Id, Vgs [Max] | 140 mOhm |
| Supplier Device Package | TO-236AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
NXV100XP Series
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources