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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 6.4 nC | 1.5 A | Surface Mount | 1.8 V | 4.5 V | TO-236AB | P-Channel | 140 mOhm | 2.1 W 340 mW | MOSFET (Metal Oxide) | 30 V | 150 °C | -55 °C | SC-59 SOT-23-3 TO-236-3 | 354 pF | 12 V | 900 mV |