Discrete Semiconductor Products
HD1750FX
LTBSTMicroelectronics
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER SLIM CRT DISPLAYS
Discrete Semiconductor Products
HD1750FX
LTBSTMicroelectronics
HIGH VOLTAGE NPN POWER TRANSISTOR FOR HIGH DEFINITION AND NEW SUPER SLIM CRT DISPLAYS
Technical Specifications
Parameters and characteristics for this part
| Specification | HD1750FX |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 24 A |
| Current - Collector Cutoff (Max) [Max] | 200 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 6.5 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | ISOWATT218FX |
| Power - Max [Max] | 75 W |
| Supplier Device Package | ISOWATT-218FX |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 800 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
HD1750FX Series
The device uses a Diffused Collector in Planar technology adopting "Enhanced High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays.
The new HD product series show improved silicon efficiency bringing updated performance to Horizontal Deflection stage.
Documents
Technical documentation and resources