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8 LFPAK
Discrete Semiconductor Products

NVMJD027N10MCLTWG

Active
ON Semiconductor

MOSFET - POWER, DUAL, N-CHANNEL, 100 V, 26 MΩ, 28 A

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8 LFPAK
Discrete Semiconductor Products

NVMJD027N10MCLTWG

Active
ON Semiconductor

MOSFET - POWER, DUAL, N-CHANNEL, 100 V, 26 MΩ, 28 A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMJD027N10MCLTWG
Configuration2 N-Channel
Current - Continuous Drain (Id) @ 25°C28 A, 7.4 A
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs9.9 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds697 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-LFPAK56, SOT-1205
Power - Max46 W, 3.1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]26 mOhm
Supplier Device Package8-LFPAK
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.55
Digi-Reel® 1$ 1.55
Tape & Reel (TR) 3000$ 0.63
6000$ 0.60
15000$ 0.58
NewarkEach (Supplied on Full Reel) 3000$ 0.77
6000$ 0.70
12000$ 0.63
18000$ 0.61
30000$ 0.59
ON SemiconductorN/A 1$ 0.62

Description

General part information

NVMJD027N10MCL Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources