NVMJD027N10MCL Series
MOSFET - Power, Dual, N-Channel, 100 V, 26 mΩ, 28 A
Manufacturer: ON Semiconductor
Catalog
MOSFET - Power, Dual, N-Channel, 100 V, 26 mΩ, 28 A
| Part | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Configuration | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Grade | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Qualification | Technology | Power - Max | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 9.9 nC | 8-LFPAK | 2 N-Channel | 26 mOhm | 3 V | Automotive | Surface Mount | -55 °C | 175 ░C | 100 V | AEC-Q101 | MOSFET (Metal Oxide) | 3.1 W 46 W | 697 pF | 7.4 A 28 A | 8-LFPAK56 SOT-1205 |
Key Features
• Small Footprint (5x6 mm)
• Low RDS (ON)
• Low QGand Capacitance
• AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Freeand are RoHS Compliant
Description
AI
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.