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SOT 363
Discrete Semiconductor Products

FDG6317NZ

Active
ON Semiconductor

DUAL 20V N-CHANNEL POWERTRENCH® MOSFET, 0.7 A, 400 MΩ

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SOT 363
Discrete Semiconductor Products

FDG6317NZ

Active
ON Semiconductor

DUAL 20V N-CHANNEL POWERTRENCH® MOSFET, 0.7 A, 400 MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDG6317NZ
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C700 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs1.1 nC
Input Capacitance (Ciss) (Max) @ Vds66.5 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]300 mW
Rds On (Max) @ Id, Vgs400 mOhm
Supplier Device PackageSC-88 (SC-70-6)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
Digi-Reel® 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.08
30000$ 0.08
75000$ 0.07
ON SemiconductorN/A 1$ 0.07

Description

General part information

FDG6317NZ Series

This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON)and gate charge (QG) in a small package.