Discrete Semiconductor Products

JAN1N5809URS

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 100V, 6A, 30NS B-MELF BAG

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Discrete Semiconductor Products

JAN1N5809URS

Active

Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 100V, 6A, 30NS B-MELF BAG

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N5809URS

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Military
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	SQ-MELF, B
Qualification	MIL-PRF-19500/477
Reverse Recovery Time (trr)	30 ns
Speed	200 mA, 500 ns
Supplier Device Package	SQ-MELF, B
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

JANTX1N5809URS-Rectifier Series

Rectifier Diode Switching 2-Pin 100V, 6A, 30ns B-MELF Bag

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Package / Case	Speed	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Grade	Qualification
Microchip Technology 1N5809	100 V	Through Hole	5 µA	Axial B	200 mA 500 ns	3 A	175 ░C	-65 C	Standard	B Axial	60 pF	30 ns
Microchip Technology JANTX1N5809URS	100 V	Surface Mount	5 µA	B SQ-MELF	200 mA 500 ns	3 A	175 ░C	-65 C	Standard	B SQ-MELF	60 pF	30 ns	Military	MIL-PRF-19500/477
Microchip Technology JAN1N5809URS	100 V	Surface Mount	5 µA	B SQ-MELF	200 mA 500 ns	3 A	175 ░C	-65 C	Standard	B SQ-MELF	60 pF	30 ns	Military	MIL-PRF-19500/477
Microchip Technology JANTX1N5809US	100 V	Surface Mount	5 µA	B SQ-MELF	200 mA 500 ns	3 A	175 ░C	-65 C	Standard	B SQ-MELF	60 pF	30 ns	Military	MIL-PRF-19500/477
Microchip Technology JANTXV1N5809US	100 V	Surface Mount	5 µA	B SQ-MELF	200 mA 500 ns	3 A	175 ░C	-65 C	Standard	B SQ-MELF	60 pF	30 ns	Military	MIL-PRF-19500/477
Microchip Technology JAN1N5809	100 V	Through Hole	5 µA	Axial B	200 mA 500 ns	6 A	175 ░C	-65 C	Standard	B Axial	60 pF	30 ns	Military	MIL-PRF-19500/477

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 15.15
Microchip Direct	N/A	1	$ 16.31

Description

General part information

JANTX1N5809URS-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both leaded and surface mount MELF package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources