Discrete Semiconductor Products

PHP20N06T,127

Obsolete

MOSFET N-CH 55V 20.3A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 55V 20.3A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	PHP20N06T,127

Current - Continuous Drain (Id) @ 25°C	20.3 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds	483 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	62 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max) [Max]	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Freescale Semiconductor - NXP PHP20N06T,127	75 mOhm	20 V	10 V	20.3 A	TO-220-3	-55 °C	175 ░C	Through Hole	62 W	N-Channel	55 V	TO-220AB	MOSFET (Metal Oxide)	11 nC	483 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 55 V 20.3A (Tc) 62W (Tc) Through Hole TO-220AB

Technical documentation and resources