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TO-263
Discrete Semiconductor Products

FDB7030L

Obsolete
ON Semiconductor

MOSFET N-CH 30V 80A TO263AB

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TO-263
Discrete Semiconductor Products

FDB7030L

Obsolete
ON Semiconductor

MOSFET N-CH 30V 80A TO263AB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFDB7030L
Current - Continuous Drain (Id) @ 25°C80 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]33 nC
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-65 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)68 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 52$ 5.78
52$ 5.78

Description

General part information

FDB7030BL Series

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

Documents

Technical documentation and resources