FDB7030BL Series

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

Catalog

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Package / Case	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor FDB7030L	33 nC	4.5 V 10 V	80 A	N-Channel	175 ░C	-65 °C	30 V	3 V	TO-263 (D2PAK)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	68 W	7 mOhm	MOSFET (Metal Oxide)
ON Semiconductor FDB7030L	33 nC	4.5 V 10 V	80 A	N-Channel	175 ░C	-65 °C	30 V	3 V	TO-263 (D2PAK)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	68 W	7 mOhm	MOSFET (Metal Oxide)
ON Semiconductor FDB7030BL	24 nC	4.5 V 10 V	60 A	N-Channel	175 ░C	-65 °C	30 V	3 V	TO-263 (D2PAK)	20 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	60 W	9 mOhm	MOSFET (Metal Oxide)	1760 pF

Catalog

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

Key Features

• 60 A, 30 V

• RDS(ON)= 9 mΩ @ VGS= 10 V

• RDS(ON)= 12 mΩ @ VGS= 4.5 V

• Critical DC electrical parameters specified at elevated temperature

• High performance trench technology for extremely low RDS(ON)

• 175°C maximum junction temperature rating

Description

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON)specifications.The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.It has been optimized for low gate charge, low RDS(ON)and fast switching speed.