Specification	STGD8NC60KDT4

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Pulsed (Icm)	30 A
Gate Charge	19 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power - Max [Max]	62 W
Reverse Recovery Time (trr)	23.5 ns
Supplier Device Package	DPAK
Switching Energy	55 µJ, 85 µJ
Td (on/off) @ 25°C	72 ns, 17 ns
Test Condition	15 V, 390 V, 3 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic [Max]	2.75 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGD8NC60KD Series

8 A, 600 V short-circuit rugged IGBT

Part	Power - Max [Max]	Test Condition	Vce(on) (Max) @ Vge, Ic [Max]	Gate Charge	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Td (on/off) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Switching Energy	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)
STMicroelectronics STGD8NC60KDT4	62 W	3 A 10 Ohm 15 V 390 V	2.75 V	19 nC	Surface Mount	600 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	17 ns 72 ns	150 °C	-55 °C	55 µJ 85 µJ	15 A	23.5 ns	30 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Technical documentation and resources