Discrete Semiconductor Products

IRLI640GPBF

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MOSFET N-CH 200V 9.9A TO220-3

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Discrete Semiconductor Products

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MOSFET N-CH 200V 9.9A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRLI640GPBF

Current - Continuous Drain (Id) @ 25°C	9.9 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	180 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Supplier Device Package	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division IRLI640GPBF	-55 °C	150 °C	40 W	N-Channel	TO-220-3	10 V	TO-220-3 Full Pack Isolated Tab	66 nC	Through Hole	1800 pF	4 V 5 V	2 V	MOSFET (Metal Oxide)	9.9 A	200 V	180 mOhm
Vishay General Semiconductor - Diodes Division IRLI640G	-55 °C	150 °C	40 W	N-Channel	TO-220-3	10 V	TO-220-3 Full Pack Isolated Tab	66 nC	Through Hole	1800 pF	4 V 5 V	2 V	MOSFET (Metal Oxide)	9.9 A	200 V	180 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3

Technical documentation and resources