IRLI640 Series

Catalog

MOSFET N-CH 200V 9.9A TO220-3

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	FET Type	Supplier Device Package	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division IRLI640GPBF	-55 °C	150 °C	40 W	N-Channel	TO-220-3	10 V	TO-220-3 Full Pack Isolated Tab	66 nC	Through Hole	1800 pF	4 V 5 V	2 V	MOSFET (Metal Oxide)	9.9 A	200 V	180 mOhm
Vishay General Semiconductor - Diodes Division IRLI640G	-55 °C	150 °C	40 W	N-Channel	TO-220-3	10 V	TO-220-3 Full Pack Isolated Tab	66 nC	Through Hole	1800 pF	4 V 5 V	2 V	MOSFET (Metal Oxide)	9.9 A	200 V	180 mOhm