Zenode.ai Logo
Beta
onsemi-NGTG15N120FL2WG IGBT Chip Trans IGBT Chip N-CH 1200V 30A 294W 3-Pin(3+Tab) TO-247 Tube
Discrete Semiconductor Products

MJE4343G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 160 V, 16 A, 125 W, TO-218, THROUGH HOLE

Deep-Dive with AI

Search across all available documentation for this part.

onsemi-NGTG15N120FL2WG IGBT Chip Trans IGBT Chip N-CH 1200V 30A 294W 3-Pin(3+Tab) TO-247 Tube
Discrete Semiconductor Products

MJE4343G

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 160 V, 16 A, 125 W, TO-218, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJE4343G
Current - Collector (Ic) (Max) [Max]16 A
Current - Collector Cutoff (Max) [Max]750 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Frequency - Transition1 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-247-3
Supplier Device PackageTO-247-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic [Max]3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]160 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.98
10$ 4.00
100$ 2.88
500$ 2.40
1000$ 2.31
ON SemiconductorN/A 1$ 2.46

Description

General part information

MJE4343 Series

The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices