
Discrete Semiconductor Products
MJE4343G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 160 V, 16 A, 125 W, TO-218, THROUGH HOLE
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Discrete Semiconductor Products
MJE4343G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 160 V, 16 A, 125 W, TO-218, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | MJE4343G |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 16 A |
| Current - Collector Cutoff (Max) [Max] | 750 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Frequency - Transition | 1 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 3.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 160 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 5.98 | |
| 10 | $ 4.00 | |||
| 100 | $ 2.88 | |||
| 500 | $ 2.40 | |||
| 1000 | $ 2.31 | |||
| ON Semiconductor | N/A | 1 | $ 2.46 | |
Description
General part information
MJE4343 Series
The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices
Documents
Technical documentation and resources