MJE4343 Series

16 A, 160 V NPN Bipolar Power Transistor

Catalog

16 A, 160 V NPN Bipolar Power Transistor

Part	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Mounting Type	Transistor Type
ON Semiconductor MJE4343G	TO-247-3	150 °C	-65 °C	3.5 V	1 MHz	16 A	15	750 µA	160 V	TO-247-3	Through Hole	NPN

Catalog

16 A, 160 V NPN Bipolar Power Transistor

Key Features

• High Collector-Emitter Sustaining Voltage -VCEO(sus)= 160 Vdc - NPN - MJE4343 PNP - MJE4353

• High DC Current Gain - @ IC= 8.0 AdchFE= 35 (Typ)

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 2.0 Vdc (Max) @ IC= 8.0 Adc

• These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

Description

The Bipolar Power Transistor is designed for use in high power audio amplifier applications and high voltage switching regulator circuits. The MJE4343 and MJE4353 are complementary devices