Discrete Semiconductor Products
TP65H050G4WS
ActiveRenesas Electronics Corporation
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 34 A, 0.06 OHM, 16 NC, TO-247, THROUGH HOLE
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Discrete Semiconductor Products
TP65H050G4WS
ActiveRenesas Electronics Corporation
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 34 A, 0.06 OHM, 16 NC, TO-247, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | TP65H050G4WS |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 34 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 119 W |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
TP65H050 Series
N-Channel 650 V 34A (Tc) 119W (Tc) Through Hole TO-247-3
Documents
Technical documentation and resources
